JPH0139226B2 - - Google Patents
Info
- Publication number
- JPH0139226B2 JPH0139226B2 JP57075946A JP7594682A JPH0139226B2 JP H0139226 B2 JPH0139226 B2 JP H0139226B2 JP 57075946 A JP57075946 A JP 57075946A JP 7594682 A JP7594682 A JP 7594682A JP H0139226 B2 JPH0139226 B2 JP H0139226B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- layer
- thyristor
- base layer
- triax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813118291 DE3118291A1 (de) | 1981-05-08 | 1981-05-08 | Triac und verfahren zu seinem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57193061A JPS57193061A (en) | 1982-11-27 |
JPH0139226B2 true JPH0139226B2 (en]) | 1989-08-18 |
Family
ID=6131807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57075946A Granted JPS57193061A (en) | 1981-05-08 | 1982-05-06 | Triac |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0064716B1 (en]) |
JP (1) | JPS57193061A (en]) |
DE (1) | DE3118291A1 (en]) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2712428B1 (fr) * | 1993-11-10 | 1996-02-09 | Sgs Thomson Microelectronics | Commutateur bidirectionnel à commande en tension. |
US5493134A (en) * | 1994-11-14 | 1996-02-20 | North Carolina State University | Bidirectional AC switching device with MOS-gated turn-on and turn-off control |
US9455253B2 (en) * | 2014-07-23 | 2016-09-27 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (en]) * | 1962-06-11 | |||
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
DE2745361A1 (de) * | 1977-10-08 | 1979-04-19 | Bbc Brown Boveri & Cie | Zweiweg-halbleiterschalter (triac) |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
JPS5595362A (en) * | 1979-01-12 | 1980-07-19 | Meidensha Electric Mfg Co Ltd | Turn-off thyristor |
DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
-
1981
- 1981-05-08 DE DE19813118291 patent/DE3118291A1/de not_active Ceased
-
1982
- 1982-05-03 EP EP82103779A patent/EP0064716B1/de not_active Expired
- 1982-05-06 JP JP57075946A patent/JPS57193061A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0064716A2 (de) | 1982-11-17 |
EP0064716B1 (de) | 1987-08-26 |
JPS57193061A (en) | 1982-11-27 |
EP0064716A3 (en) | 1983-10-12 |
DE3118291A1 (de) | 1982-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3476993A (en) | Five layer and junction bridging terminal switching device | |
US2967793A (en) | Semiconductor devices with bi-polar injection characteristics | |
JPS609669B2 (ja) | サイリスタ | |
US4611128A (en) | Triac having a multilayer semiconductor body | |
US3896476A (en) | Semiconductor switching device | |
US3622845A (en) | Scr with amplified emitter gate | |
US4157562A (en) | Gate controlled bidirectional semiconductor switching device having two base regions each having a different depth from an adjacent surface | |
JPS609668B2 (ja) | サイリスタ | |
US3475666A (en) | Integrated semiconductor switch system | |
JPS609670B2 (ja) | サイリスタ | |
US2862115A (en) | Semiconductor circuit controlling devices | |
US3914782A (en) | Reverse conducting thyristor and process for producing the same | |
US4464673A (en) | Semiconductor component | |
US4737834A (en) | Thyristor with controllable emitter short-circuit paths inserted in the emitter | |
JPH0138382B2 (en]) | ||
JPH0139226B2 (en]) | ||
JPS637471B2 (en]) | ||
US4009059A (en) | Reverse conducting thyristor and process for producing the same | |
JPH0138380B2 (en]) | ||
US3967308A (en) | Semiconductor controlled rectifier | |
US3958268A (en) | Thyristor highly proof against time rate of change of voltage | |
JPH0142510B2 (en]) | ||
US4114178A (en) | Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate | |
US3943548A (en) | Semiconductor controlled rectifier | |
GB2208257A (en) | Overvoltage protector |